Display device and method of fabricating the same

ABSTRACT

A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a passive matrix or activematrix display such as a liquid crystal display and, more particularly,to a fashionable display device in which the ratio of the area of thedisplay portion to the area of the substrates of the display device isincreased by effectively mounting a driver semiconductor integratedcircuit.

[0003] 2. Description of the Related Art

[0004] Passive matrix type and active matrix type constructions areknown as matrix display devices. In the passive matrix type, a number ofstripe-shaped conducting lines (row lines) made of a transparentconductive film or the like are arrayed in a certain direction on afirst substrate. On a second substrate, similar stripe-shaped conductinglines (column lines) are arrayed in a direction substantiallyperpendicular to the conducting lines on the first substrate. Bothsubstrates are so arranged that the conducting lines on them intersecteach other.

[0005] An electrooptical material such as a liquid crystal materialwhose transparency, reflectivity, or scattering performance is varied bya voltage, current, or the like is positioned between both substrates.If a voltage or current is applied between an addressed row line on thefirst substrate and an addressed column line on the second substrate,then the transparency, reflectivity, or scattering performance at theintersection can be set to a desired value. In this way, the displaydevice can be matrix driven.

[0006] In the active matrix construction, row and column lines areformed on the first substrate by multilayer metallization techniques.Pixel electrodes are formed at the intersections of the row and columnlines. An active device such as a thin-film transistor (TFT) is formedat each pixel electrode to control the potential or current in the pixelelectrode. A transparent conductive film is also formed on the secondsubstrate. Both substrates are so arranged that the pixel electrodes onthe first substrate are located opposite to the transparent conductivefilm on the second substrate.

[0007] In either type, the substrates are selected according to the usedprocess. For example, the passive matrix construction needs no complexprocess steps except for steps where the transparent conductive filmsare formed and etched into row and column conducting line patterns. Thesubstrates of this passive matrix type may be made from plastic, as wellas from glass. On the other hand, to manufacture the active matrixconstruction, a relatively high-temperature film formation step isrequired. Furthermore, the active matrix type must keep out mobile ionssuch as sodium ions. The substrates of the active matrix type must bemade of glass containing a quite low concentration of alkali.

[0008] In any type of prior art matrix display device excluding specialconstructions, a semiconductor integrated circuit (peripheral drivercircuit) for driving the matrix is required to be mounted. In the past,this has been done by tape automated bonding (TAB) or chip on glass(COG) However, the matrix construction contains as many as severalhundreds of rows. Therefore, the integrated circuit has a very largenumber of terminals. The corresponding driver circuit takes the form ofa rectangular IC package or semiconductor chip. To connect theseterminals with the conducting lines on the substrates, it is necessaryto lay the conducting lines in a complex manner. As a consequence, theratio of the area of the peripheral portion, or non-display portion, tothe area of the display portion is not negligibly small.

[0009] A method for solving this problem is disclosed in Japanese PatentLaid-Open No. 14880/1995, and consisting of forming a driver circuit onan elongated substrate (referred to as a stick or stick crystal) havinga length substantially equal to one side of the matrix construction andconnecting the driver circuit with the terminal portion of the matrix.This arrangement is permitted, because a width of about 2 mm sufficesfor the driver circuit. Therefore, almost the whole area of thesubstrate can be made a viewing screen.

[0010] Of course, in this case, where the matrix has a large area, it isimpossible to form a circuit on a silicon wafer. Consequently, it isnecessary to form the circuit on a glass substrate or the like. Hence,active devices used in semiconductor devices are TFTs.

[0011] However, where a stick crystal is employed, the thickness of thesubstrate of the driver circuit has been an obstacle to miniaturizationof the whole display device. For example, where the display deviceshould be made thinner, the thickness of the substrate is allowed to beset to 0.3 mm by optimizing the kind of the substrate and themanufacturing steps. However, because of the strength necessary duringmanufacturing steps, it is difficult to reduce the thickness of thestick crystal below 0.5 mm. As a result, where two substrates are bondedtogether, the stick crystal protrudes as long as 0.2 mm or more.

[0012] Furthermore, if the stick crystal differs from the substrates ofthe display device in kind, then defects may be produced in the circuitbecause of the difference in coefficient of thermal expansion and forother causes. Especially, where a plastic substrate is used in a displaydevice, this problem is conspicuous, because poor heat resistance ofplastics makes it substantially impossible to use a plastic substrate asa stick crystal substrate.

[0013] Moreover, where the kind of the substrate supporting the stickcrystal is different from the kind of the substrates of the displaydevice, other known methods are used to circumvent the above-describedproblem. In one known method, a semiconductor integrated circuit havingTFTs is fabricated on other support substrate. Then, the circuit ispeeled off and adhesively bonded to another substrate. In another knownmethod, the original support substrate is removed after adhesivelybonding the circuit to another substrate. This technique is generallyknown as silicon-on-insulator (SOI) technique.

[0014] However, when the support substrate is removed, the semiconductorintegrated circuit is often damaged, thus deteriorating themanufacturing yield.

SUMMARY OF THE INVENTION

[0015] It is an object of the present invention to provide a smallerdisplay device of reduced weight by solving the foregoing problems withthe stick crystal.

[0016] It is another object of the invention to provide a method offabricating display devices with a high production yield by solving theaforementioned problems.

[0017] The present invention is characterized in that the driver circuitportion of a display device is made thinner by mechanically bonding asemiconductor integrated circuit equivalent to a stick crystal to asubstrate for the display device, making electrical connections, andthen removing only the substrate from the stick crystal. In thisconstruction, stress induced by deformation caused by thermal expansionof the substrate is applied uniformly to the whole circuit. Therefore,the stress is prevented from being concentrated in certain portions;otherwise it would be inevitable that defects are produced.

[0018] Essentially, the present invention lies in a display devicecomprising a first substrate and a second substrate having a transparentconductive film on its surface. Conducting lines are formed on the firstsubstrate. The first substrate has an elongated semiconductor integratedcircuit which is electrically connected with the conducting lines andhas TFTs. The transparent conductive film on the second substrate facesthe surface of the first substrate on which the conducting lines areformed. The length of the semiconductor integrated circuit is roughlyequal to the length of one side of the viewing surface, or the matrix,of the display device, in the same way as the stick crystal described inthe above-cited Japanese Patent Laid-Open No. 14880/1995. Thesemiconductor integrated circuit is first fabricated on anothersubstrate. The integrated circuit is peeled off and mounted on the firstsubstrate.

[0019] In the case of the passive matrix type, the display devicecomprises a first substrate having an elongated first semiconductorcircuit and a second substrate having a second semiconductor integratedcircuit. A plurality of first conducting lines extending in a firstdirection are formed from a transparent conductive film on the firstsemiconductor integrated circuit. The first semiconductor integratedcircuit is connected with the first conducting lines, has TFTs, andextends in a second direction substantially perpendicular to the firstdirection. The second substrate has second conducting lines which areformed from a transparent conductive film and extend in the seconddirection. The second semiconductor integrated circuit is connected withthe second conducting lines, has TFTs, and extend in the firstdirection. The first and second substrates are so arranged that thefirst conducting lines are located opposite to the second conductinglines. The first and second semiconductor integrated circuits areobtained by fabricating them on other substrates, peeling the integratedcircuits off, and bonding them to their respective substrates.

[0020] In the case of an active matrix type, the display devicecomprises a first substrate having a first and a second semiconductorintegrated circuits and a second substrate having a transparentconductive film on its surface. A plurality of first conducting linesextending in a first direction are formed on the first substrate. Thefirst semiconductor integrated circuit is connected with the firstconducting lines, has TFTs, and extend in a second directionsubstantially perpendicular to the first direction. A plurality ofsecond conducting lines extending in the second direction are formedalso on the first substrate. The second semiconductor integrated circuitis connected with the second conducting lines, has TFTs, and extends inthe first direction. The first and second substrates are so arrangedthat the first and second conducting lines on the first substrate areopposite to the transparent conductive film on the second substrate. Thefirst and second semiconductor integrated circuits are obtained byfabricating them on other substrates, peeling the integrated circuitsoff, and mounting them to the first substrate.

[0021] The method consisting of forming a semiconductor integratedcircuit having TFTs on other substrate, peeling off the circuit, andbonding the circuit to a further substrate (alternatively, the originalsubstrate is removed after bonding to another substrate) is generallyknown as one of SOI (silicon-on-insulator) techniques and described inJapanese Patent Laid-Open No. 504139/1994. Also, other well-knowntechniques can be used.

[0022] The step for peeling a semiconductor integrated circuit from itssupport substrate needs the most advanced technique. The presentinvention is characterized in that when the semiconductor integratedcircuit is peeled from the support substrate, a gas containing ahalogen, especially halogen fluoride, is used.

[0023] A halogen fluoride is given by a chemical formula XF_(n), where Xis a halogen other than fluorine and n is an integer. It is known thathalogen fluorides include chlorine monofluoride (ClF), chlorinetrifluoride (ClF₃), bromine monofluoride (BrF), bromine trifluoride(BrF₃) iodine monofluoride (IF), and iodine trifluoride (IF₃).

[0024] A halogen fluoride is characterized in that it etches siliconeven under a non-plasma state but does not etch silicon oxide at all.Since it is not necessary to use a plasma, the circuit is not destroyedby plasma damage. This effectively contributes to an improvement in theproduction yield. Furthermore, the etching selectivity between siliconoxide and silicon is quite high. This is advantageous in that neitherthe circuit nor the elements are destroyed.

[0025] In the present invention, a peeling layer consisting principallyof silicon is formed on a support substrate. A semiconductor integratedcircuit coated with silicon oxide is formed on the peeling layer. Asmentioned above, silicon is etched by a halogen fluoride without using aplasma. Other gases containing a halogen such as carbon tetrafluoride(CF₄) and nitrogen trifluoride (NF₃) etch silicon under a plasmacondition and so they can be used for the invention.

[0026] Accordingly, by placing the support substrate either within a gascontaining a halogen such as a halogen fluoride or within a plasma, thepeeling layer is peeled from the support substrate. As a consequence,the semiconductor integrated circuit can be peeled off.

[0027] An example of a display device according to the present inventionis shown in FIGS. 1(A)-1(D) in cross section FIG. 1(A) depicts thedevice with a relatively small magnification. The left side of thisfigure shows a driver circuit portion 7 having a semiconductorintegrated circuit 2. The right side shows a matrix portion 8. Aconducting line pattern 4 is formed from a transparent conductive filmon a substrate 1. A bump 6 is made of gold or other similar material.The semiconductor integrated circuit 2 has a thickness substantiallyequal to the thickness of TFTs. The integrated circuit 2 has a connectorportion having an electrode 5 made of a conductive oxide whose contactresistance is not varied if it is oxidized. The electrode 5 is broughtinto contact with the bump 6. A resin 3 is injected between thesemiconductor integrated circuit 2 and the substrate 1 to mechanicallyhold the components (FIG. 1(A)).

[0028]FIG. 1(B) is an enlarged view of the contact portion surrounded bythe dotted line in FIG. 1(A). It is to be noted that like components areindicated by like reference numerals in various figures. FIG. 1(C) is anenlarged view of the portion surrounded by the dotted line in FIG. 1(B).The semiconductor integrated circuit includes an N-channel TFT 12 and aP-channel TFT 13 which are sandwiched by a buffer dielectric film 11 andan interlayer dielectric layer 14 and a passivation film 15 made ofsilicon nitride or the like (FIGS. 1(B) and 1(C)).

[0029] When a semiconductor integrated circuit is formed, the bufferfilm 11 is normally made of silicon oxide. However, sufficient moistureresistance cannot be obtained only with this scheme. Therefore, apassivation film must be formed on the buffer film. If the semiconductorcircuit and its contact portion are thinner than the spacing between thesubstrates of the device as shown in FIG. 3, then it is possible to forma counter substrate 16 on the circuit. In this case, the outer side ofthe driver circuit portion 7 is sealed with a sealing material 17 suchas epoxy resin, in the same way as the manufacture of a liquid crystaldevice as disclosed in Japanese Patent Laid-Open No. 66413/1993. The gapbetween the substrates 1 and 16 is filled with a liquid crystal material18 and so mobile ions do not intrude into the gap from the outside.Hence, any special passivation film is not required (FIG. 3).

[0030] The contact portion can use a bump as described above. Anothermethod is illustrated in FIG. 1(D). That is, conductive particles 9 suchas particles of gold are diffused into the contact portion to provideelectrical contact. The diameter of the particles is slightly greaterthan the spacing between the semiconductor integrated circuit 2 and thesubstrate 1 (FIG. 1(D)).

[0031] The sequence for fabricating this display device which is of thepassive matrix type is shown in FIGS. 2(A)-2(G). First, a number ofsemiconductor integrated circuits 22 are formed on an appropriatesubstrate 21 (FIG. 2(A)).

[0032] The resulting laminate is cut to form stick crystals 23 and 24.The electrical characteristics of the obtained stick crystals 23 and 24may be checked before the next manufacturing step is effected, to judgewhether the crystals are acceptable or rejected (FIG. 2(B)).

[0033] Then, the surfaces of the stick crystals 23 and 24 on which thecircuits are formed are bonded to surfaces 26 and 28 of separatesubstrates 25 and 27, respectively. Conducting line patterns are formedfrom transparent conductive films on the surfaces 26 and 28. Electricalconnections are made (FIGS. 2(C) and 2(D)).

[0034] Subsequently, the stick drivers 23 and 24 are peeled from theirrespective substrates by SOI techniques or by processing with a gascontaining a halogen. In this way, only semiconductor integratedcircuits 29 and 30 are left on the surfaces 26 and 28, respectively, ofthe substrates (FIGS. 2(E) and 2(F)).

[0035] Finally, the laminates obtained in this manner are made to faceeach other. As a result, a passive matrix display is derived. A surface26 faces away from the surface 26. That is, no conducting line patternis formed on the surface 26 (FIG. 2(G)).

[0036] In the above example, the row stick crystal (i.e., the stickcrystal for a driver circuit for driving row lines) and the column stickcrystal (i.e., the stick crystal for a driver circuit for driving columnlines) are extracted from the same substrate 21. Of course, they may beextracted from separate substrates.

[0037] The example shown in FIGS. 2(A)-2(G) is a passive matrix display.Obviously, the invention can be similarly applied to an active matrixdisplay. In the illustrated examples given below, each substrate is madeof a filmy material.

[0038] Other objects and features of the invention will appear in thecourse of the description thereof, which follows.

BRIEF DESCRIPTION OF THE DRAWINGS

[0039] FIGS. 1(A)-1(D) are cross-sectional views of a display deviceaccording to the present invention;

[0040] FIGS. 2(A)-2(G) are exploded perspective views of another displaydevice according to the invention, schematically illustrating a methodof fabricating the device;

[0041]FIG. 3 is a cross-sectional view of a further display deviceaccording to the invention;

[0042] FIGS. 4(A)-4(C) are cross-sectional views of a stick crystal usedfor manufacturing steps according to the invention;

[0043] FIGS. 5(A)-5(D) are cross-sectional views, illustrating steps forbonding a stick crystal to a substrate; and

[0044]FIG. 6 is a schematic view of a system for fabricating filmyliquid crystal devices in succession.

DESCRIPTION OF THE PREFERRED EMBODIMENTS EXAMPLE 1

[0045] Manufacturing steps for fabricating one substrate of a passivematrix liquid crystal display are briefly described now. The presentexample is described by referring to FIGS. 4(A)-4(C) and 5(A)-5(D).Steps for forming a driver circuit on a stick crystal are schematicallyshown in FIGS. 4(A)-4(C). Steps for mounting the stick crystal on thesubstrate of the liquid crystal display are schematically shown in FIGS.5(A)-5(D).

[0046] First, a silicon film having a thickness of 3000 Å was depositedas a peeling layer 32 on a glass substrate 31. Since the silicon filmbecoming the peeling layer 32 is etched away when circuitry and asubstrate formed on the silicon film are separated, the quality of thesilicon film will present almost no problems. Therefore, the siliconfilm may be deposited by a method which permits mass production.Furthermore, the silicon film may be either amorphous or crystalline incharacter.

[0047] The glass substrate may be made of Corning 7059 glass, Corning1737 glass, NH Technoglass NA45, NH Technoglass NA35, Nippon Denki GlassOA2, other non-alkali or low-alkali glass, or quartz glass. Where quartzglass is used, the cost poses a problem. In the present invention,however, the area of the substrate used in one liquid crystal display isquite small and so the cost per device is sufficiently low.

[0048] A silicon oxide film was deposited as a buffer film 33 having athickness of 5000 Å on the peeling layer 32. Sufficient care must betaken in fabricating the buffer film 33 from silicon oxide. Islands 34and 35 of crystalline silicon region were formed by a well-known method.The thickness of the islands of crystalline silicon region greatlyaffects the required semiconductor characteristics. Generally, it wasdesired to make the thickness smaller. In the present example, thethickness was 400-600 Å.

[0049] Where crystalline silicon is obtained, laser annealing (i.e.,amorphous silicon is illuminated with intense light such as laser light)or solid-phase epitaxy using thermal annealing is employed. Wheresolid-phase epitaxy is utilized, if a catalytic element such as nickelis added to the silicon as disclosed in Japanese Patent Laid-Open No.244104/1994, then the crystallization temperature can be lowered, andthe annealing time can be shortened. Furthermore, as described inJapanese Patent Laid-Open No. 318701/1994, once silicon is crystallizedby solid-phase epitaxy, it may be laser-annealed. The adopted method isdetermined, taking account of the required semiconductor circuitcharacteristics, the maximum processing temperature of the substrate,and other factors.

[0050] Then, a gate-insulating film 36 of silicon oxide having athickness of 1200 Å was deposited by plasma CVD or thermal CVD.Subsequently, gate electrodes/interconnects 37, 38 were formed from acrystalline silicon film having a thickness of 5000 Å. The gateelectrodes/interconnects 37, 38 may be made from metals such asaluminum, tungsten, and titanium, or their silicides. Where metallicgate electrodes/interconnects 37, 38 are formed, their top or sidesurfaces may be coated with anodic oxide as disclosed in Japanese PatentLaid-Open Nos. 267667/1993 and 338612/1994. The material of the gateelectrodes/interconnects 37, 38 is determined according to the requiredsemiconductor circuit characteristics, the maximum processingtemperature of the substrate, and other factors (FIG. 4(A)).

[0051] Thereafter, N- and P-type impurity ions were introduced into theislands of silicon 34 and 35 by self-aligned ion implantation or othermethod to form N-type regions 39 and P-type regions 40. Then, aninterlayer dielectric film 41 of silicon oxide having a thickness of5000 Å was deposited by a well-known means. Contact holes were createdin this interlayer dielectric film. Aluminum alloy interconnects 41-44were formed (FIG. 4(B)).

[0052] A silicon nitride film 46 having a thickness of 2000 Å wasdeposited as a passivation film on the laminate by plasma CVD. Contactholes communicating with the output terminal lines 44 were formed inthis passivation film. An ITO (indium-tin oxide) electrode 47 having athickness of 1000 Å was formed by sputtering techniques. ITO is atransparent conductive oxide. A gold bump 48 having a diameter of about50 μm and a height of 30 μm was mechanically formed on the ITO electrode47. The resulting circuit was cut into appropriate size, thus obtaininga stick crystal (FIG. 4(C)).

[0053] An electrode 50 was formed also from ITO to a thickness of 1000 Åon another substrate 49 of the liquid crystal display. In the presentexample, a substrate of polyethylene sulfite having a thickness of 0.3mm was used. The substrate 31 of the stick driver was bonded to thissubstrate 49 under pressure. At this time, the electrodes 47 and 50 wereelectrically connected to each other via the bump 48 (FIG. 5(A)).

[0054] Then, an adhesive 51 to which a thermosetting organic resin wasadded was injected into the gap between the stick crystal 31 and thesubstrate 49 of the liquid crystal display. The adhesive may be appliedto the surface of any one of the stick crystal 31 and the substrate 49before they are bonded together under pressure.

[0055] The laminate was processed for 15 minutes in an oven filled witha nitrogen ambient at 120° C. In this way, electrical connection andmechanical bonding between the stick crystal 31 and the substrate 49were completed. Before the bonding operation is completed in this way, acheck may be done to see whether the electrical connection issatisfactory or not by the method disclosed in the above-cited JapanesePatent Laid-Open No. 14880/1995 (FIG. 5(B)).

[0056] The laminate processed in this way was allowed to stand in astream of mixture gas of chlorine trifluoride (ClF₃) and nitrogen. Theflow rate of each of the chlorine trifluoride and nitrogen was 500 SCCM.The reaction pressure was 1 to 10 torr. The temperature was roomtemperature. It is known that halogenated fluorine such as chlorinetrifluoride selectively etches silicon. On the other hand, oxides suchas silicon oxide and ITO are hardly etched. Also with respect toaluminum, if a stable oxide coating is formed on an aluminum film, thenreaction no longer progresses. Hence, the aluminum is not etched.

[0057] In the present example, materials which might be attacked bychlorine trifluoride are the peeling layer (silicon) 32, the islands ofsilicon 34, 35, the gate electrodes/interconnects 37, 38, the aluminumalloy interconnects 41-44, and the adhesive 51. These materialsexcluding the peeling layer 32 and the adhesive 51 are capped withsilicon oxide and other materials and, therefore, chlorine trifluorideis unable to reach them. In practice, only the peeling layer 32 wasselectively etched as shown in FIG. 5(C), thus forming voids 52.

[0058] As time passed further, the peeling layer 32 was completelyetched away, so that the bottom surface 53 of the buffer film 33 wasexposed. Thus, the substrate 31 of the stick crystal was separated fromthe semiconductor circuit. With etching using chlorine trifluoride, theetching process came to a stop at the bottom surface of the buffer filmand so the bottom surface 53 was quite flat (FIG. 5(D)).

[0059] In this manner, fabrication of the semiconductor integratedcircuit on one substrate of the liquid crystal display was completed.The liquid crystal display is completed, using the substrate obtained inthis way.

EXAMPLE 2

[0060] The present example relates to a method (referred to as theroll-to-roll method) of successively fabricating filmy passive matrixliquid crystal displays. A production system for implementing thepresent example is shown in FIG. 6. The substrate material for obtainingthe filmy liquid crystal displays may be selected from polyethylenesulfite, poly-carbonate, and polyimide. Since polyethylene terephthalateand polyethylene naphthalate are polycrystalline plastics, they are notappropriate as liquid crystal materials which provide displays makinguse of polarization of light.

[0061] The production system shown in FIG. 6 is divided into two majorparts: the upper portion and the lower portion. In the lower portion, asubstrate on which color filters are formed is fabricated as a componentof a liquid crystal display. In the upper portion, a counter substrateis manufactured. First, steps for fabricating the substrate on which thecolor filters are formed are described.

[0062] Color filters of the three primary colors (RGB) are printed onthe surface of a film wound on a roll 71. The color filters are formed,using three sets of rolls 72. Where the manufactured liquid crystaldisplays are monochrome devices, this step is dispensed with. This stepis referred to as color filter printing.

[0063] Then, an overcoat is printed to form a planarization film, usingrolls 73. The overcoat acts to planarize the surface which is madeuneven by the formation of the color filters. A transparent resinousmaterial may be used as the material of the overcoat. This step isreferred to as printing of overcoat (planarization film).

[0064] Then, row (column) electrodes are printed in a desired pattern,using a conductive ink, by means of rolls 74. This step is referred toas formation of electrodes.

[0065] Thereafter, an orientation film is printed, using rolls 75. Thisstep is referred to as printing of orientation film. The film is passedthrough a heating furnace 76 to bake and solidify the orientation film.This step is referred to as the baking of orientation film.

[0066] The film is then passed between rolls 77 to rub the surface ofthe orientation film. In this way, the orientation step is completed.This step is referred to as rubbing.

[0067] Then, a stick crystal is mounted on the substrate by a pressureconnection device 78. This step is referred to as mounting of the stickcrystal. The laminate is passed through a heating furnace 79 to cure theadhesive. Thus, the bonding operation is completed. This step isreferred to as curing of the adhesive.

[0068] In the present example, the peeling layer uses silicon, in thesame way as in Example 1. Then, the peeling layer is etched by achlorine trifluoride chamber 80 which is differentially pumped toprevent the chlorine trifluoride from leaking out. As a result, thesubstrate is peeled from the stick crystal. This step is referred to aspeeling of the stick crystal.

[0069] Then, spacers are sprayed onto the filmy substrate by a spacerapplicator 81. This step is referred to as spraying of spacers. Asealing material is printed, using rolls 82. The sealing material actsto bond together the two opposite substrates and to prevent the liquidcrystal material from leaking from the space between the substrates. Inthe present example, the semiconductor circuit is rendered thinner thanthe spacing between the substrates to seal the outer surface of thesemiconductor integrated circuit as shown in FIG. 3, as disclosed in theabove-cited Japanese Patent Laid-Open No. 66413/1993. This step isreferred to as printing of the sealant.

[0070] Subsequently, a liquid crystal material is dripped, using aliquid crystal dripper 83. As a result, a liquid crystal material layeris formed on the filmy substrate. In this way, the substrate on the sideof the color filters, or a color filter panel, is completed. Thesemanufacturing steps are made to progress successively by rotating thevarious rolls.

[0071] Then, steps for manufacturing the counter substrate aredescribed. Column (row) electrodes are formed in a desired pattern onthe filmy substrate fed out of a roll 61 by means of rolls 62. This stepis referred to as formation of electrodes.

[0072] Thereafter, an orientation film is formed by printing techniques,using rolls 63. This step is referred to as printing of the orientationfilm. The film is passed through a heating furnace 64 to bake andsolidify the orientation film. This step is referred to as baking of theorientation film.

[0073] Then, the filmy substrate is passed between rolls 65 to orientthe molecules of the liquid crystal material. This step is referred toas rubbing.

[0074] The stick crystal is mounted on the substrate by a pressureconnection device 66. This step is referred to mounting of the stickcrystal. The laminate is passed through a heating furnace 67 to cure theadhesive. This step is referred to as curing of the adhesive.

[0075] Then, the substrate of the stick crystal is peeled off by achlorine trifluoride chamber 68. This step is referred to as peeling ofthe stick crystal.

[0076] The filmy substrate undergone the steps described thus far ispassed around a roll 69 and sent to next rolls 84. The substrate havingthe color filters and the counter substrate are bonded together by therolls 84, thus forming a liquid crystal cell. This step is referred toas bonding.

[0077] The assembly is then heated by a heating furnace 85 to cure thesealing material. In this way, the bonding of the substrates iscompleted. This step is referred to as curing of the sealant.

[0078] The assembly is cut into desired dimensions by a cutter 86, thuscompleting a filmy liquid crystal display. This step is referred to ascutting.

[0079] In the present invention, the kinds, the thickness, and the sizeof the substrates of the display device can be varied variously. Forexample, as described in Example 2, a liquid crystal display in the formof a quite thin film can be obtained. In this case, the display devicemay be curved along a curved surface and bonded to it. Furthermore, lessrestrictions are imposed on the kind of the substrates. As aconsequence, a lightweight material having high shock resistance such asa plastic substrate may also be used. This improves the portability.

[0080] In addition, in the present invention, the semiconductorintegrated circuit forming a driver circuit is peeled from its supportsubstrate by a halogen-containing gas which is not in a plasma state.Therefore, destruction of the semiconductor integrated circuit whichwould normally be caused by plasma damage can be prevented. This leadsto an improvement in the yield with which liquid crystal displays aremanufactured.

[0081] Moreover, the driver circuit occupies less area and so thedisplay device can be arranged relative to other devices with a greaterdegree of freedom. Typically, the driver circuit can be confined withina region only a few centimeters wide around the display surface.Therefore, the display device itself is quite simple and is a highlyfashionable industrial product. It can find extensive application.Hence, the present invention is industrially quite advantageous.

What is claimed is:
 1. A device and/or method substantially as shown anddescribed.